InGaAs/GaAsSb Type-Il Heterojunction Vertical Tunnel-FETs

In GaAs/GaAsSb Heterojunction TFET

Tunnel FETs are a promising alternate to MOSFETs for low power design due to the ability to scale threshold voltage and hence supply voltage, without increase in OFF currents. However, they suffer from low ON currents. Demonstrated here is theenhancement in ION in arsenide–antimonide staggered-gap heterojunction (hetj) tunnel field-effect transistors (TFETs) by engineering the effective tunneli...

Pseudomorphic and metamorphic (Al)GaAsSb/(Al)InGaAs tunnel junctions for GaAs based Multi-Junction Solar Cells

Aim and approach Tunnel Junctions (TJs) are key devices for monolithic Multi-Junction Solar Cells (MJSCs), in which they ensure the series interconnection between the subcells. For GaAs based MJSCs, very low resistive (with peak tunneling current density Jpeak up to 10 kA/cm2) AlGaAs:C/GaInP:Te or AlGaAs:C/GaAs:Te have been recently developed by MOVPE using Te instead of Si as N-dopant making i...

14.2 Nano-scale Type-II InP/GaAsSb DHBTs to Reach THz Cutoff Frequencies

We demonstrate vertically and laterally scaled GaAsSb/InP type-II DHBTs with fT = 670 GHz at 10.3 mA/μm emitter current density and off-state collector-emitter breakdown voltage BVCEO = 3.2 V. Small-signal modeling is used to extract delay terms and to identify material design and device fabrication requirements for next-generation devices with > 1 THz cutoff frequencies. INTRODUCTION InP based...

Demonstration of p-type In0.7Ga0.3As/GaAs0.35Sb0.65 and n-type GaAs0.4Sb0.6/In0.65Ga0.35As Complimentary Heterojunction Vertical Tunnel FETs for Ultra-Low Power Logic

Semiconducting Nanowire Tunnel Devices

In this thesis innovative tunnel devices based on new architectures, new fabrication approaches and novel material combinations are fabricated and investigated in detail. In particular, nanowire homoand heterojunction tunnel diodes based on Si and InAs-Si have been demonstrated for the rst time. The gained knowledge and understanding of tunnel diodes is applied to design and fabricate InAs-Si h...